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The 4N35 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
INPUT LEDReverse Voltage VR :6 VoltsForward Current — Continuous :IF 60 mA
OUTPUT TRANSISTORCollector–Emitter Voltage VCEO: 30 VoltsEmitter–Base Voltage VEBO: 7 VoltsCollector–Base Voltage VCBO :70 VoltsCollector Current — Continuous IC: 150 mA